Abstract: A Ka-band high power amplifier MMIC developed from 0.18μm gate-length AlGaN/GaN HEMT on SiC is presented. The MMIC chip was measured on-wafer across 29GHz to 31GHz under pulsed bias ...
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Abstract: A 50 W S-band High Power Amplifier in the UMS GH25-10 technology is presented. In order to increase the output power per area the size of the transistors is increased beyond the maximum size ...
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